US 11,756,994 B2
Semiconductor device and method of manufacturing semiconductor device
Toshiharu Marui, Kanagawa (JP); Tetsuya Hayashi, Kanagawa (JP); Keiichiro Numakura, Kanagawa (JP); Wei Ni, Kanagawa (JP); Ryota Tanaka, Kanagawa (JP); and Keisuke Takemoto, Kanagawa (JP)
Assigned to NISSAN MOTOR CO., LTD., Yokohama (JP); and RENAULT S.A.S., Boulogne-Billancourt (FR)
Filed by NISSAN MOTOR CO., LTD., Yokohama (JP); and RENAULT s.a.s., Boulogne-Billancourt (FR)
Filed on Sep. 14, 2022, as Appl. No. 17/944,853.
Application 17/944,853 is a division of application No. 17/423,966, granted, now 11,476,326, previously published as PCT/IB2019/000063, filed on Jan. 21, 2019.
Prior Publication US 2023/0074093 A1, Mar. 9, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 21/76 (2006.01); H01L 21/761 (2006.01); H01L 29/16 (2006.01)
CPC H01L 29/0634 (2013.01) [H01L 21/046 (2013.01); H01L 21/761 (2013.01); H01L 21/7602 (2013.01); H01L 29/1608 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor base body; and
a first main electrode and a second main electrode provided on the semiconductor base body to serve as both ends of a current passage of a main current flowing in an ON state,
the semiconductor base body including:
a drift region of a first conductivity type through which the main current flows;
a column region of a second conductivity type arranged adjacent to the drift region in parallel to the current passage of the main current;
a second electrode-connection region of the first conductivity type electrically connected to the second main electrode and connected to the drift region; and
a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region, and arranged between the second electrode-connection region and the column region, the low-density electric-field relaxation region extending parallel to the drift region along the current passage of the main current,
wherein the low-density electric-field relaxation region and the second electrode-connection region have no surface opposed to the column region.