CPC H01L 29/0634 (2013.01) [H01L 21/046 (2013.01); H01L 21/761 (2013.01); H01L 21/7602 (2013.01); H01L 29/1608 (2013.01)] | 10 Claims |
1. A semiconductor device comprising:
a semiconductor base body; and
a first main electrode and a second main electrode provided on the semiconductor base body to serve as both ends of a current passage of a main current flowing in an ON state,
the semiconductor base body including:
a drift region of a first conductivity type through which the main current flows;
a column region of a second conductivity type arranged adjacent to the drift region in parallel to the current passage of the main current;
a second electrode-connection region of the first conductivity type electrically connected to the second main electrode and connected to the drift region; and
a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region, and arranged between the second electrode-connection region and the column region, the low-density electric-field relaxation region extending parallel to the drift region along the current passage of the main current,
wherein the low-density electric-field relaxation region and the second electrode-connection region have no surface opposed to the column region.
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