US 11,756,987 B2
Ferroelectric tunnel junction devices with discontinuous seed structure and methods for forming the same
Han-Jong Chia, Hsinchu (TW); and Mauricio Manfrini, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Apr. 14, 2021, as Appl. No. 17/230,477.
Claims priority of provisional application 63/045,320, filed on Jun. 29, 2020.
Prior Publication US 2021/0408223 A1, Dec. 30, 2021
Int. Cl. H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/28 (2006.01); H10B 53/30 (2023.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/56 (2013.01) [H01L 21/02601 (2013.01); H01L 28/60 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/78391 (2014.09); H01L 29/78696 (2013.01); H10B 53/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising a memory cell comprising:
a bottom electrode layer;
a high-k dielectric layer disposed on the bottom electrode layer;
a discontinuous seed structure comprising particles of a metal disposed on the high-k dielectric layer;
a ferroelectric (FE) layer disposed on the seed structure and directly contacting portions of high-k dielectric layer exposed through the seed structure; and
a top electrode layer disposed on the FE layer.