US 11,756,983 B2
Silicon nano light emitting diodes
Rajeev J. Ram, Arlington, MA (US); Jaehwan Kim, Cambridge, MA (US); Jin Xue, Cambridge, MA (US); and Zheng Li, Shenzhen (CN)
Assigned to Massachusetts Institute of Technology, Cambridge, MA (US)
Appl. No. 17/765,361
Filed by Massachusetts Institute of Technology, Cambridge, MA (US)
PCT Filed Dec. 10, 2021, PCT No. PCT/US2021/062889
§ 371(c)(1), (2) Date Mar. 30, 2022,
PCT Pub. No. WO2022/125950, PCT Pub. Date Jun. 16, 2022.
Claims priority of provisional application 63/123,565, filed on Dec. 10, 2020.
Prior Publication US 2023/0139185 A1, May 4, 2023
Int. Cl. H01L 27/15 (2006.01)
CPC H01L 27/156 (2013.01) 20 Claims
OG exemplary drawing
 
1. A light source comprising:
a structure comprising indirect bandgap semiconductor material formed on a substrate, the structure having a maximum dimension that is no larger than 1000 nm and a minimum dimension that is no smaller than 25 nm and wherein the structure includes a semiconductor junction and a radiative recombination region formed from the indirect bandgap semiconductor material;
a first region of n-type semiconductor material connected to the structure and arranged to inject electrons into the radiative recombination region in a first direction; and
a second region of p-type semiconductor material connected to the structure and arranged to inject holes into the radiative recombination region in a second direction such that the electrons and the holes recombine in the radiative recombination region to produce photons, wherein the electrons and the holes are injected into the structure across an oxide barrier when the light source is operating.