US 11,756,960 B2
Multi-threshold voltage gate-all-around transistors
Jingyun Zhang, Albany, NY (US); Takashi Ando, Tuckahoe, NY (US); and Choonghyun Lee, Rensselaer, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 24, 2021, as Appl. No. 17/483,981.
Application 17/483,981 is a division of application No. 16/420,753, filed on May 23, 2019, granted, now 11,133,309, issued on Sep. 28, 2021.
Prior Publication US 2022/0085014 A1, Mar. 17, 2022
Int. Cl. H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01)
CPC H01L 27/0922 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/28088 (2013.01); H01L 21/28158 (2013.01); H01L 21/3115 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 29/0673 (2013.01); H01L 29/408 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/66545 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising at least:
a first transistor having a first threshold voltage, the first transistor comprising at least
a first gate structure surrounding one or more nanosheet channel layers of the first
transistor, wherein the first gate structure comprises a first dielectric layer comprising a first thickness; and
a second transistor having a second threshold voltage that is different than the first threshold voltage, the second transistor comprising at least
a second gate structure surrounding one or more nanosheet channel layers of the
second transistor, wherein the second gate structure comprises a second dielectric layer comprising a second thickness that is greater than the first thickness.