US 11,756,902 B2
High-frequency module
Hideki Ueda, Kyoto (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Kyoto (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto (JP)
Filed on Oct. 1, 2019, as Appl. No. 16/589,336.
Application 16/589,336 is a continuation of application No. PCT/JP2018/007632, filed on Feb. 28, 2018.
Claims priority of application No. 2017-073390 (JP), filed on Apr. 3, 2017.
Prior Publication US 2020/0035626 A1, Jan. 30, 2020
Int. Cl. H01L 23/66 (2006.01); H01Q 5/378 (2015.01); H01Q 1/48 (2006.01); H01Q 1/52 (2006.01); H01Q 13/08 (2006.01); H01Q 13/10 (2006.01); H01Q 23/00 (2006.01)
CPC H01L 23/66 (2013.01) [H01Q 1/48 (2013.01); H01Q 1/526 (2013.01); H01Q 5/378 (2015.01); H01Q 13/08 (2013.01); H01Q 13/10 (2013.01); H01Q 23/00 (2013.01); H01L 2223/6677 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A high-frequency module comprising:
a dielectric substrate;
a ground plane provided in the dielectric substrate or on a top surface of the dielectric substrate;
a high-frequency semiconductor device mounted on a bottom surface of the dielectric substrate;
a shield structure provided in a space closer to the bottom surface than the ground plane is and surrounding the high-frequency semiconductor device from below and from side of the high-frequency semiconductor device, the shield structure being connected to the ground plane and having an opening;
a radiation-structure portion for radiating a high-frequency signal outputted by the high-frequency semiconductor device as electromagnetic waves through the opening; and
an upper radiating element provided at a portion of the dielectric substrate above the ground plane and driven by the high-frequency semiconductor device.