US 11,756,828 B2
Cluster processing system for forming a transition metal material
Keith Tatseun Wong, Los Gatos, CA (US); Srinivas D. Nemani, Sunnyvale, CA (US); and Ellie Y. Yieh, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 20, 2018, as Appl. No. 16/197,048.
Prior Publication US 2020/0161176 A1, May 21, 2020
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01)
CPC H01L 21/76834 (2013.01) [H01L 21/28562 (2013.01); H01L 21/76832 (2013.01); H01L 23/5329 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for a device structure for semiconductor devices, comprising:
forming a film from a two-dimensional transition metal dichalcogenide and a process gas from a group consisting of 1,2-ethanedithiol, dimethyldisulfide, diethyldisulfide, and diethylsulfide, wherein the film is formed on a substrate in a first processing chamber disposed in a cluster processing system;
thermally treating the film to form a treated metal layer in a second processing chamber disposed in the cluster processing system, wherein the thermal treatment removes carbon from the film leaving only sulfur from the process gas and metal from a metal precursor to form a MX2 compound, wherein M comprises molybdenum (Mo) or tungsten (W) and X comprises sulfur (S); and
forming a capping layer on the MX2 compound in a third processing chamber disposed in the cluster processing system.