US 11,756,826 B2
Forming terminations in stacked memory arrays
Matthew J. King, Boise, ID (US); Anilkumar Chandolu, Boise, ID (US); Indra V. Chary, Boise, ID (US); Darwin A. Clampitt, Wilder, ID (US); Gordon Haller, Boise, ID (US); Thomas George, Boise, ID (US); Brett D. Lowe, Boise, ID (US); and David A. Daycock, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 13, 2021, as Appl. No. 17/473,679.
Application 17/473,679 is a division of application No. 16/159,955, filed on Oct. 15, 2018, granted, now 11,121,146.
Prior Publication US 2021/0408029 A1, Dec. 30, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/762 (2006.01); H10B 43/40 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01)
CPC H01L 21/76802 (2013.01) [H01L 21/762 (2013.01); H01L 21/76808 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H10B 43/20 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02)] 20 Claims
OG exemplary drawing
 
17. A method of forming a stacked memory array, comprising:
forming a stack of alternating first and second dielectrics;
forming an opening through the stack so that a first segment of the opening is between a first group of semiconductor structures and a second group of semiconductor structures in a first region of the stack and a second segment of the opening is in a second region of the stack that does not include the first and second semiconductor structures;
closing the first and second segments of the opening with a sacrificial material;
opening the closed second segment of the opening;
forming a third dielectric in the opened second segment of the opening; and
removing the sacrificial material from the closed first segment of the opening to form a new opening between the first group of semiconductor structures and the second group of semiconductor structures that terminates at the third dielectric.