| CPC H01L 21/6833 (2013.01) [H01L 21/26 (2013.01); H01L 21/68735 (2013.01)] | 10 Claims |
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1. A method of chucking a substrate in a substrate process chamber, comprising:
placing a substrate on a substrate support within a process volume, the substrate comprising:
a body formed of a material comprising a grain size between about 1 μm and about 4 μm; and
a plurality of substrate supporting features formed on a substrate supporting region of the substrate support, the plurality of substrate supporting features comprising between about 75 and about 100 substrate support features, each of the substrate supporting features having a substrate supporting surface and a rounded edge, wherein a ratio of a distance between adjacent substrate supporting features and a diameter of the substrate supporting region is between about 0.01 and about 0.2, and wherein each of the plurality of substrate supporting features have a surface roughness between about 2 Ra and about 3 Ra;
raising the substrate to a distance between about 0.5 mm and about 10 mm from an upper surface of the substrate support;
exposing the substrate to a preheat treatment, the preheat treatment comprising;
flowing one or more inert process gases into the process volume, the inert process gases comprises one or more of helium, argon, and nitrogen, the one or more process gases flowed into the process volume at a flow rate between about 500 sccm and about 5000 sccm;
generating a plasma from the one or more inert process gases and exposing the substrate to the plasma for a period between 10 seconds and about 200 seconds;
maintaining the process volume at a pressure between about 1 Torr and about 20 Torr;
lowering the substrate onto the upper surface of the substrate support while pumping down the process volume; and
applying a chucking voltage to the substrate support after exposing the substrate to the preheat treatment.
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