US 11,756,797 B2
Etching method of copper-molybdenum film and array substrate
Yuan Mei, Guangdong (CN)
Assigned to TCL China Star Optoelectronics Technology Co., Ltd., Guangdong (CN)
Appl. No. 16/954,593
Filed by TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong (CN)
PCT Filed Apr. 23, 2020, PCT No. PCT/CN2020/086318
§ 371(c)(1), (2) Date Jun. 17, 2020,
PCT Pub. No. WO2021/208126, PCT Pub. Date Oct. 21, 2021.
Claims priority of application No. 202010293568.2 (CN), filed on Apr. 15, 2020.
Prior Publication US 2021/0327721 A1, Oct. 21, 2021
Int. Cl. H01L 21/32 (2006.01); H01L 21/3213 (2006.01); H01L 27/12 (2006.01); G02F 1/1368 (2006.01)
CPC H01L 21/32134 (2013.01) [H01L 21/32139 (2013.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01); G02F 1/1368 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A etching method of a copper-molybdenum composite film comprising:
step S10 of sequentially forming a molybdenum film and a copper film on the substrate to form a copper-molybdenum composite film;
step S20 of forming a photoresist in a predetermined pattern on the copper-molybdenum composite film;
step S30 of etching a copper film of the copper-molybdenum composite film with an acidic first etching solution to form an intermediate copper metal pattern;
step S40 of etching the molybdenum film of the copper-molybdenum composite film with a neutral or basic second etching solution, to form a molybdenum metal pattern, wherein a cross-sectional width of the molybdenum metal pattern is less than a cross-sectional width of the intermediate copper metal pattern;
step S50 of etching the intermediate copper metal pattern with the first etching solution to form a final copper metal pattern; wherein the molybdenum metal pattern and the final copper metal pattern form the copper-molybdenum metal layer in the predetermined pattern;
wherein a PH value of the acidic first etching solution ranges from 0 to 2, a pH value of the neutral or basic second etching solution ranges from 6 to 9, and the step S40 is performed after the step S30.