CPC H01L 21/32134 (2013.01) [H01L 21/32139 (2013.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01); G02F 1/1368 (2013.01)] | 7 Claims |
1. A etching method of a copper-molybdenum composite film comprising:
step S10 of sequentially forming a molybdenum film and a copper film on the substrate to form a copper-molybdenum composite film;
step S20 of forming a photoresist in a predetermined pattern on the copper-molybdenum composite film;
step S30 of etching a copper film of the copper-molybdenum composite film with an acidic first etching solution to form an intermediate copper metal pattern;
step S40 of etching the molybdenum film of the copper-molybdenum composite film with a neutral or basic second etching solution, to form a molybdenum metal pattern, wherein a cross-sectional width of the molybdenum metal pattern is less than a cross-sectional width of the intermediate copper metal pattern;
step S50 of etching the intermediate copper metal pattern with the first etching solution to form a final copper metal pattern; wherein the molybdenum metal pattern and the final copper metal pattern form the copper-molybdenum metal layer in the predetermined pattern;
wherein a PH value of the acidic first etching solution ranges from 0 to 2, a pH value of the neutral or basic second etching solution ranges from 6 to 9, and the step S40 is performed after the step S30.
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