CPC H01L 21/266 (2013.01) [H01L 21/26513 (2013.01); H01L 29/1095 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 21/0274 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] | 20 Claims |
1. A transistor, comprising:
a control gate isolated from a first region of semiconductor material having a first conductivity type;
a first source/drain region having a second conductivity type different than the first conductivity type and formed in the first region of semiconductor material;
a second source/drain region having the second conductivity type and formed in the first region of semiconductor material; and
a second region of semiconductor material having the first conductivity type in contact with the first region of semiconductor material, wherein the first region of semiconductor material is between the control gate and the second region of semiconductor material;
wherein the first region of semiconductor material has a first width extending in a first direction from the first source/drain region to the second source/drain region;
wherein the second region of semiconductor material has a second width, less than or equal to the first width, extending in the first direction; and
wherein the first source/drain region is selectively connected to the second source/drain region in response to a control signal applied to the control gate.
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