US 11,756,787 B2
Process for the hetero-integration of a semiconductor material of interest on a silicon substrate
Mickaël Martin, Grenoble (FR); Thierry Baron, Saint-Egreve (FR); and Virginie Loup, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); and UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR); and UNIVERSITE GRENOBLE ALPES, Saint Martin d'Heres (FR)
Filed on Oct. 12, 2020, as Appl. No. 17/68,756.
Claims priority of application No. 1911447 (FR), filed on Oct. 15, 2019.
Prior Publication US 2021/0111022 A1, Apr. 15, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/02499 (2013.01) [H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02639 (2013.01); H01L 29/0603 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A process for the hetero-integration of a semiconductor material of interest on a silicon substrate, comprising:
a step of removing a native oxygen from the silicon substrate;
a step of structuring the substrate which comprises a step of producing a growth mask on the surface of the silicon substrate, said growth mask comprising a plurality of masking patterns, two masking patterns being separated by a trench wherein the silicon substrate is exposed;
a step of forming a two-dimensional buffer layer made of a 2D material, said buffer layer being free of side bonds on its free surface and being formed selectively on a silicon plane of [111] orientation in at least one trench, said step of forming a buffer layer being performed after the structuring step and being performed by an organometallic vapour deposition (MOCVD) technique;
a step of forming at least one layer of a semiconductor material of interest on the buffer layer; and
a passivation step which consists in depositing an atomic biplane of gallium and selenium onto the silicon plane of [111] orientation so as to form a silicon-gallium-selenium passivated surface on said plane.