US 11,756,625 B2
Adaptive temperature compensation for memory devices
Renato C. Padilla, Folsom, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 12, 2021, as Appl. No. 17/200,591.
Prior Publication US 2022/0293183 A1, Sep. 15, 2022
Int. Cl. G11C 8/00 (2006.01); G11C 16/10 (2006.01); G11C 7/04 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 7/04 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
receiving a request to perform a memory access operation, the request identifying a memory cell in a segment of the memory system comprising at least a portion of the memory device;
determining that an operating temperature of the memory device satisfies a threshold criterion;
responsive to determining that the operating temperature of the memory device satisfies the threshold criterion, determining a temperature compensation value corresponding to an access control voltage adjustment value specific to the segment of the memory system, wherein the temperature compensation value is determined based on a plurality of average voltage thresholds for blocks programmed and read at a plurality of temperature ranges; and
adjusting, based on an amount represented by the temperature compensation value, an access control voltage applied to the memory cell during the memory access operation.