US 11,756,620 B2
Content-addressable memory and analog content-addressable memory device
Po-Hao Tseng, Taichung (TW); Feng-Min Lee, Hsinchu (TW); and Ming-Hsiu Lee, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Sep. 1, 2021, as Appl. No. 17/463,607.
Prior Publication US 2023/0061496 A1, Mar. 2, 2023
Int. Cl. G11C 15/00 (2006.01); G11C 15/04 (2006.01)
CPC G11C 15/046 (2013.01) 12 Claims
OG exemplary drawing
 
1. A memory cell for an analog content-addressable memory (analog CAM), comprising:
an N-type transistor having a first gate, the first gate of the N-type transistor being configured to receive a first input signal;
a P-type transistor having a second gate, the second gate of the P-type transistor being configured to receive a second input signal; and
a current control circuit, coupled to at least one of the N-type transistor and the P-type transistor, the current control circuit being configured to generate at least one passing current;
wherein when an input voltage of the first input signal and an input voltage of the second input signal are within a matching range, the N-type transistor and the P-type transistor are turned on, and the passing current is substantially a fixed current value, the matching range is related to a threshold voltage of the N-type transistor, a threshold voltage of the P-type transistor, and the fixed current value, and the input voltage of the first input signal and the input voltage of the second input signal are the same when performing searching and comparing data in the analog CAM.