US 11,756,595 B2
Memory device with selective precharging
Ed McCombs, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 21, 2022, as Appl. No. 17/676,544.
Application 17/676,544 is a continuation of application No. 17/113,316, filed on Dec. 7, 2020, granted, now 11,257,528.
Application 17/113,316 is a continuation of application No. 16/523,592, filed on Jul. 26, 2019, granted, now 10,861,513, issued on Dec. 8, 2020.
Claims priority of provisional application 62/753,770, filed on Oct. 31, 2018.
Prior Publication US 2022/0180908 A1, Jun. 9, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 11/419 (2006.01); G11C 11/418 (2006.01); G11C 5/14 (2006.01)
CPC G11C 7/12 (2013.01) [G11C 5/147 (2013.01); G11C 8/08 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a precharge circuit operably connected to a memory cell;
a first switch circuit operably connected between the precharge circuit and a first signal line providing a first voltage level that is greater than a low voltage level;
a second switch circuit operably connected between the precharge circuit and a second signal line providing a second voltage level that is greater than the low voltage level and less than the first voltage level;
a voltage level detector operably connected to the second signal line; and
a charge storage device operably connected to the second signal line.