US 11,755,237 B2
Overwriting at a memory system
Jonathan S. Parry, Boise, ID (US); Giuseppe Cariello, Boise, ID (US); and Reshmi Basu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 31, 2021, as Appl. No. 17/462,228.
Prior Publication US 2023/0069603 A1, Mar. 2, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a memory device comprising a memory array; and
a controller coupled with the memory device and configured to cause the apparatus to:
perform write operations in accordance with a first voltage demarcation between logic states to store first information at a portion of the memory array;
determine to overwrite the portion of the memory array with second information; and
perform write operations in accordance with a second voltage demarcation between the logic states, different than the first voltage demarcation between the logic states, based at least in part on determining to overwrite the portion of the memory array, to store the second information at the portion of the memory array.