CPC G03F 1/24 (2013.01) [G03F 1/58 (2013.01); G03F 1/52 (2013.01); G03F 1/60 (2013.01)] | 20 Claims |
1. A method of manufacturing an extreme ultraviolet (EUV) mask blank comprising:
forming a multilayer stack of reflective layers on a substrate, the multilayer stack of reflective layers including a plurality of reflective layer pairs;
forming a capping layer on the multilayer stack of reflective layers; and
forming a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs, each pair comprising two different absorber materials having extinction coefficient (k) values that are different and index of refraction values (n) that are different, wherein the absorber layer pairs comprise a first layer including an absorber material selected from tantalum nitride (TaN) and tantalum nitride oxide (TaNO), and a second layer including an absorber material selected from the group consisting of zinc (Zn), iron (Fe), cobalt (Co), chromium-nickel alloys, Ni8Cr12, copper (Cu) and zinc telluride (ZnTe).
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