US 11,753,739 B2
Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5
Yusuke Mori, Osaka (JP); Masashi Yoshimura, Osaka (JP); Masayuki Imanishi, Osaka (JP); Akira Kitamoto, Osaka (JP); Junichi Takino, Osaka (JP); and Tomoaki Sumi, Osaka (JP)
Assigned to PANASONIC HOLDINGS CORPORATION, Osaka (JP); and OSAKA UNIVERSITY, Osaka (JP)
Filed by OSAKA UNIVERSITY, Osaka (JP); and PANASONIC HOLDINGS CORPORATION, Osaka (JP)
Filed on Sep. 20, 2021, as Appl. No. 17/479,516.
Application 17/479,516 is a continuation of application No. 16/776,647, filed on Jan. 30, 2020, granted, now 11,155,931.
Claims priority of application No. 2019-018035 (JP), filed on Feb. 4, 2019.
Prior Publication US 2022/0056614 A1, Feb. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 25/16 (2006.01); C30B 29/40 (2006.01)
CPC C30B 25/165 (2013.01) [C30B 29/403 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of manufacturing a group-III nitride crystal comprising:
preparing a seed substrate; and
supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate,
wherein the Po is a supply partial pressure of the group-III element oxide gas,
the Pe is an equilibrium partial pressure of the group-III element oxide gas such that a first reaction and a second reaction are in equilibrium,
in the first reaction, the group-III nitride crystal is generated from the group-III element oxide gas and the nitrogen element-containing gas, and
in the second reaction, a group-III element gas is generated from decomposition reaction of the group-III element oxidation gas.