CPC C30B 25/165 (2013.01) [C30B 29/403 (2013.01)] | 6 Claims |
1. A method of manufacturing a group-III nitride crystal comprising:
preparing a seed substrate; and
supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate,
wherein the Po is a supply partial pressure of the group-III element oxide gas,
the Pe is an equilibrium partial pressure of the group-III element oxide gas such that a first reaction and a second reaction are in equilibrium,
in the first reaction, the group-III nitride crystal is generated from the group-III element oxide gas and the nitrogen element-containing gas, and
in the second reaction, a group-III element gas is generated from decomposition reaction of the group-III element oxidation gas.
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