US 11,753,738 B2
Nanopore forming method and uses thereof
Jiandong Feng, Morges (CH); Ke Liu, Chavannes-pres-Renens (CH); Aleksandra Radenovic, St. Sulpice (CH); and Yann Astier, Livermore, CA (US)
Assigned to Ecole Polytechnique Federale De Lausanne (EPFL), Lausanne (CH); and Roche Sequencing Solutions, Inc., Pleasanton, CA (US)
Filed by Ecole Polytechnique Federale De Lausanne (EPFL), Lausanne (CH); and Roche Sequencing Solutions, Inc., Pleasanton, CA (US)
Filed on Jul. 28, 2022, as Appl. No. 17/876,161.
Application 17/174,230 is a division of application No. 16/432,163, filed on Jun. 5, 2019, granted, now 10,947,637, issued on Mar. 16, 2021.
Application 16/432,163 is a division of application No. 15/688,264, filed on Aug. 28, 2017, granted, now 10,364,507, issued on Jul. 30, 2019.
Application 17/876,161 is a continuation of application No. 17/174,230, filed on Feb. 11, 2021, granted, now 11,401,625.
Application 15/688,264 is a continuation of application No. PCT/IB2016/051425, filed on Mar. 12, 2016.
Claims priority of provisional application 62/286,235, filed on Jan. 22, 2016.
Claims priority of application No. 15158894 (EP), filed on Mar. 12, 2015; and application No. 15171077 (EP), filed on Jun. 8, 2015.
Prior Publication US 2022/0380930 A1, Dec. 1, 2022
Int. Cl. C25F 3/12 (2006.01); B23H 9/14 (2006.01); B23H 3/02 (2006.01); B23H 7/20 (2006.01); G01N 33/487 (2006.01); G01N 27/414 (2006.01); C12Q 1/6869 (2018.01); C25F 7/00 (2006.01); G01N 27/447 (2006.01); G01R 19/00 (2006.01)
CPC C25F 3/12 (2013.01) [B23H 3/02 (2013.01); B23H 7/20 (2013.01); B23H 9/14 (2013.01); C12Q 1/6869 (2013.01); C25F 7/00 (2013.01); G01N 27/4145 (2013.01); G01N 27/44791 (2013.01); G01N 33/48721 (2013.01); G01R 19/0092 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A system for forming a nanopore, the system comprising:
a layer of transition metal dichalcogenide crystals;
an insulating material in contact with the layer of transition metal dichalcogenide crystals;
a first liquid disposed on a first side of the layer of transition metal dichalcogenide crystals;
a first electrode disposed in the first liquid;
a second liquid disposed on a second side of the layer of transition metal dichalcogenide crystals, wherein the first side is opposite the second side;
a second electrode disposed in the second liquid;
a voltage source in electrical communication with the first electrode and the second electrode such that the voltage source is configured to provide a voltage across the first electrode and the second electrode;
a current measuring device in electrical communication with the voltage source, the first electrode, and the second electrode; and
a control system configured to vary a voltage level of the voltage provided by the voltage source to maintain a constant average current level of a current measured by the current measuring device, wherein the current is an alternating current.