US 11,753,296 B2
MEMS device and method for manufacturing mems device
Masakazu Fukumitsu, Nagaokakyo (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Sep. 1, 2020, as Appl. No. 17/9,045.
Application 17/009,045 is a continuation of application No. PCT/JP2018/047317, filed on Dec. 21, 2018.
Claims priority of application No. 2018-099784 (JP), filed on May 24, 2018.
Prior Publication US 2020/0391999 A1, Dec. 17, 2020
Int. Cl. B81B 7/00 (2006.01); B81C 3/00 (2006.01); B81C 1/00 (2006.01)
CPC B81C 1/00349 (2013.01) [B81C 1/00325 (2013.01); B81C 3/001 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A MEMS device comprising:
a lower substrate having a resonator that includes a lower electrode, an upper electrode, and a piezoelectric film disposed therebetween;
an upper substrate that opposes the resonator;
a bonding layer that seals an internal space between the lower substrate and the upper substrate; and
a wiring layer that contains a same metal material as the bonding layer,
wherein the wiring layer comprises a rare gas content that is less than 1×1020 (atoms/cm3),
wherein the wiring layer is disposed in the internal space and not directly coupled to the bonding layer,
wherein the wiring layer comprises a pair of wiring layers that electrically couples an external terminal to one of the lower electrode and the upper electrode of the resonator,
wherein a first wiring layer of the pair of wiring layers is offset in a thickness direction relative to a second wiring layer of the pair of wiring layers, such that a non-eutectic portion is provided in a region away from a contact area between the first and second wiring layers, and
wherein the thickness direction is measured in a directional normal to a surface of the piezoelectric film.