US 11,752,594 B2
Articles having diamond-only contact surfaces
Daniel Mastrobattisto, Southbury, CT (US); Edward Gratrix, Monroe, CT (US); Prashant Karandikar, Avondale, PA (US); and William Vance, Newtown, CT (US)
Assigned to II-VI DELAWARE, INC., Wilmington, DE (US)
Filed by M Cubed Technologies, Inc., Newtown, CT (US)
Filed on Oct. 3, 2017, as Appl. No. 15/724,248.
Application 15/724,248 is a continuation of application No. PCT/US2016/026272, filed on Apr. 6, 2016.
Claims priority of provisional application 62/143,748, filed on Apr. 6, 2015.
Prior Publication US 2018/0099379 A1, Apr. 12, 2018
Int. Cl. B24D 3/10 (2006.01); C04B 35/573 (2006.01); H01L 21/687 (2006.01); C04B 35/80 (2006.01); B24B 53/047 (2006.01); C30B 29/04 (2006.01)
CPC B24D 3/10 (2013.01) [B24B 53/047 (2013.01); C04B 35/573 (2013.01); C04B 35/80 (2013.01); C30B 29/04 (2013.01); H01L 21/68757 (2013.01); C04B 2235/427 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5436 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor wafer handling article, comprising:
a surface configured to support a semiconductor wafer, said wafer support surface including a composite material that includes a matrix component and a reinforcement component including diamond particulate distributed throughout said matrix component,
wherein said matrix component has a recessed or relieved surface, leaving diamond particles of said diamond particulate standing proud relative to the recessed or relieved surface of the matrix component, such that all wafer contact is with said diamond particles, and
wherein said matrix component comprises reaction bonded silicon carbide,
wherein the matrix component is electrical discharge machinable,
wherein the semiconductor wafer handling article is selected from the group consisting of vacuum wafer chuck, electrostatic chuck, vacuum wafer table, wafer arm, and susceptor,
wherein the diamond particles have flattops with rounded edges formed by lapping, wherein the flattops are configured to support the semiconductor wafer, and wherein the flat tops of the diamond particles have a common elevation.