US 11,751,847 B2
Ultrasound transducer and method for wafer level back face attachment
Flavien Daloz, Antibes (FR); Jason Barrett, Queen Creek, AZ (US); Edouard Da Cruz, Nice (FR); and Jean Pierre Malacrida, Saint Laurent (FR)
Assigned to GE PRECISION HEALTHCARE LLC, Milwaukee, WI (US)
Filed by General Electric Healthcare, Schenectady, NY (US)
Filed on Dec. 4, 2019, as Appl. No. 16/703,406.
Application 16/703,406 is a division of application No. 15/385,671, filed on Dec. 20, 2016, granted, now 10,561,398.
Prior Publication US 2020/0107814 A1, Apr. 9, 2020
Int. Cl. A61B 8/00 (2006.01); H10N 30/073 (2023.01); H10N 30/088 (2023.01); H10N 30/00 (2023.01); B06B 1/06 (2006.01)
CPC A61B 8/4483 (2013.01) [B06B 1/0644 (2013.01); H10N 30/073 (2023.02); H10N 30/088 (2023.02); H10N 30/10516 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A method, comprising:
laminating a first comb structure and a second comb structure into an acoustic stack, the first comb structure having fins including a piezoelectric layer intermediate a matching layer and a backing layer, the second comb structure having fins and kerfs;
plating a first conductive layer over a top surface of the acoustic stack;
plating a second conductive layer over a bottom surface of the acoustic stack;
cutting a groove through the second conductive layer;
dicing the cut acoustic stack into an ultrasound transducer having a back face including a signal pad and a ground pad formed by the second conductive layer and separated by the groove; and
inserting a distal end of a flex attachment into the groove, the flex attachment having a proximal end configured to electrically couple to a processor, wherein the flex attachment includes a non-conductive middle layer intermediate a first conductive layer and a second conductive layer.