US 11,751,486 B2
Templating layers for perpendicularly magnetized Heusler films/compounds
Jaewoo Jeong, San Jose, CA (US); Panagiotis Charilaos Filippou, San Jose, CA (US); Yari Ferrante, San Jose, CA (US); Chirag Garg, San Jose, CA (US); Stuart Stephen Papworth Parkin, San Jose, CA (US); and Mahesh Samant, San Jose, CA (US)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Nov. 20, 2020, as Appl. No. 17/100,726.
Prior Publication US 2022/0165939 A1, May 26, 2022
Int. Cl. H10B 61/00 (2023.01); H10N 50/85 (2023.01); H01F 41/32 (2006.01); H01F 10/32 (2006.01); H10N 50/01 (2023.01)
CPC H10N 50/85 (2023.02) [H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 41/32 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a templating structure including D and E, a ratio of D to E being represented by D1-xEx, with x being at least 0.4 and not more than 0.6, E including a main constituent, the main constituent including at least one of Al, Ga, and Ge, E including at least fifty atomic percent of the main constituent, D including at least one constituent that includes Ir, D including at least 50 atomic percent of the at least one constituent; and
a magnetic layer on the templating structure, the magnetic layer including at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure and being magnetic at room temperature.