US 11,751,483 B2
Spin diode devices
Wai Cheung Law, Singapore (SG); Grayson Dao Hwee Wong, Singapore (SG); Kazutaka Yamane, Singapore (SG); Chim Seng Seet, Singapore (SG); and Wen Siang Lew, Singapore (SG)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Dec. 28, 2020, as Appl. No. 17/134,582.
Prior Publication US 2022/0209102 A1, Jun. 30, 2022
Int. Cl. H10N 50/10 (2023.01); H01F 10/32 (2006.01); H03B 15/00 (2006.01); H03D 1/10 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H03B 15/006 (2013.01); H03D 1/10 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A microwave detecting device comprising:
a spin diode device configured to detect a microwave signal oscillating at one of a first target oscillating frequency and a second target oscillating frequency, the spin diode device comprising:
a magnetic tunnel junction stack disposed between a lower electrode and an upper electrode of the spin diode device, the magnetic tunnel junction stack comprising:
a lower magnetic layer comprising a lower magnetic film;
a tunnel barrier layer over the lower magnetic layer, the tunnel barrier layer comprising an insulating material; and
an upper magnetic layer over the tunnel barrier layer, the upper magnetic layer comprising an upper magnetic film;
wherein each of the lower magnetic film and the upper magnetic film has perpendicular magnetic anisotropy,
wherein the lower magnetic film comprises a first perpendicular magnetic anisotropy strength corresponding to a first natural ferromagnetic resonance frequency, the first natural ferromagnetic resonance frequency corresponds to the first target oscillating frequency,
wherein the upper magnetic film comprises a second perpendicular magnetic anisotropy strength corresponding to a second natural ferromagnetic resonance frequency, the second natural ferromagnetic resonance frequency corresponds to the second target oscillating frequency,
wherein the second perpendicular magnetic anisotropy strength is different from the first perpendicular magnetic anisotropy strength, wherein the second natural ferromagnetic resonance frequency is different from the first natural ferromagnetic resonance frequency.