US 11,751,412 B2
Quantum dot light-emitting device and preparation method thereof
Dong Li, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Mar. 11, 2022, as Appl. No. 17/692,446.
Application 17/692,446 is a continuation of application No. 16/764,470, granted, now 11,309,504, previously published as PCT/CN2019/125757, filed on Dec. 16, 2019.
Claims priority of application No. 201910027598.6 (CN), filed on Jan. 11, 2019.
Prior Publication US 2022/0199927 A1, Jun. 23, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/00 (2006.01); H10K 50/115 (2023.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 71/00 (2023.01); H10K 101/40 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 71/00 (2023.02); H10K 2101/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot light-emitting device, comprising a first electrode layer, a quantum dot light-emitting layer, a second electrode layer and a third electrode layer which are sequentially arranged in a stacked mode, wherein
a side, away from the first electrode layer, of the third electrode layer is configured as a light exiting side;
the second electrode layer and the third electrode layer are transparent electrode layers;
a Fermi energy level of the second electrode layer is smaller than a LUMO energy level of the quantum dot light-emitting layer and greater than a Fermi energy level of the third electrode layer;
a thickness of the second electrode layer is 5%-20% of a thickness of the third electrode layer; and
an oxygen content of material of the second electrode layer is smaller than an oxygen content of material of the third electrode layer.