US 11,751,397 B2
Semiconductor storage device and method of manufacturing the same
Yuta Saito, Yokkaichi Mie (JP); Shinji Mori, Nagoya Aichi (JP); Atsushi Takahashi, Yokkaichi Mie (JP); Toshiaki Yanase, Yokkaichi Mie (JP); Keiichi Sawa, Yokkaichi Mie (JP); Kazuhiro Matsuo, Kuwana Mie (JP); and Hiroyuki Yamashita, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by KIOXIA CORPORATION, Tokyo (JP)
Filed on Jun. 27, 2022, as Appl. No. 17/850,699.
Application 17/850,699 is a division of application No. 16/809,887, filed on Mar. 5, 2020, granted, now 11,398,494.
Claims priority of application No. 2019-128985 (JP), filed on Jul. 11, 2019.
Prior Publication US 2022/0336492 A1, Oct. 20, 2022
Int. Cl. H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 21/02672 (2013.01); H01L 29/045 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor storage device, comprising:
forming a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction;
forming a first semiconductor layer in the stacked body through a memory film including a first insulator, a charge storage layer and a second insulator, the first semiconductor layer penetrating the stacked body and extending in the first direction;
attaching metal atoms on a surface of the first semiconductor layer;
annealing the first semiconductor layer to crystallize the first semiconductor layer;
forming a second semiconductor layer on a surface of the first semiconductor layer after crystallizing the first semiconductor layer; and
annealing the first semiconductor layer and the second semiconductor layer to reduce a quantity of the metal atoms in the first semiconductor layer.