CPC H10B 43/27 (2023.02) [H01L 21/02672 (2013.01); H01L 29/045 (2013.01)] | 7 Claims |
1. A method of manufacturing a semiconductor storage device, comprising:
forming a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction;
forming a first semiconductor layer in the stacked body through a memory film including a first insulator, a charge storage layer and a second insulator, the first semiconductor layer penetrating the stacked body and extending in the first direction;
attaching metal atoms on a surface of the first semiconductor layer;
annealing the first semiconductor layer to crystallize the first semiconductor layer;
forming a second semiconductor layer on a surface of the first semiconductor layer after crystallizing the first semiconductor layer; and
annealing the first semiconductor layer and the second semiconductor layer to reduce a quantity of the metal atoms in the first semiconductor layer.
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