CPC H10B 43/27 (2023.02) [H01L 21/3115 (2013.01); H01L 21/3215 (2013.01); H10B 41/27 (2023.02)] | 26 Claims |
1. A memory array comprising strings of memory cells, comprising:
a vertical stack comprising alternating insulative tiers and conductive tiers;
strings of memory cells in the stack comprising channel-material strings comprising channel material and storage-material strings comprising storage material, the storage-material strings extending through the insulative tiers and the conductive tiers; and
at least some of the storage material of the storage-material strings in individual of the insulative tiers being intrinsically less charge-transmissive than is the storage material in the storage-material strings in individual of the conductive tiers.
|