US 11,751,391 B2
Methods for fabricating a 3-dimensional memory structure of nor memory strings
Vinod Purayath, Sedona, AZ (US); Yosuke Nosho, Tokyo (JP); Shohei Kamisaka, Kanagawa (JP); Michiru Nakane, Tokyo (JP); and Eli Harari, Saratoga, CA (US)
Assigned to SUNRISE MEMORY CORPORATION, San Jose, CA (US)
Filed by SUNRISE MEMORY CORPORATION, San Jose, CA (US)
Filed on Jul. 21, 2021, as Appl. No. 17/382,126.
Application 17/382,126 is a continuation in part of application No. 16/914,089, filed on Jun. 26, 2020, granted, now 11,177,281, issued on Nov. 16, 2021.
Application 16/914,089 is a continuation of application No. 16/510,610, filed on Jul. 12, 2019, granted, now 10,741,581, issued on Aug. 11, 2020.
Claims priority of provisional application 62/697,085, filed on Jul. 12, 2018.
Claims priority of provisional application 63/054,750, filed on Jul. 21, 2020.
Prior Publication US 2022/0028886 A1, Jan. 27, 2022
Prior Publication US 2023/0247831 A9, Aug. 3, 2023
Int. Cl. H01L 21/28 (2006.01); H10B 43/27 (2023.01); H01L 29/51 (2006.01)
CPC H10B 43/27 (2023.02) [H01L 29/40117 (2019.08); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A process, comprising:
providing over a planar surface of a semiconductor substrate first and second multi-layer structures that are separated by a trench with a predetermined width, as measured along a first direction that is substantially parallel the planar surface, each multi-layer structure comprising a plurality of multi-layer active strips each extending lengthwise along a second direction that is substantially orthogonal to the first direction and which are stacked one on top of another along a third direction that is substantially normal to the planar surface, wherein adjacent ones of the multi-layer active strips are electrically isolated from each other by a layer of an isolation material, and wherein each active multi-layer strip comprises first and second conductive layers separated by a dielectric material;
recessing the sidewalls of the trench at the multi-layer strips along the first direction, thereby creating recesses between adjacent layers of isolation material; providing in the recesses a predetermined material; filling the trench with a first filler material; forming first and second shafts at a predetermined distance along the second direction by removing in each shaft a portion of each multi-layer strip from each of the first and second multi-layer structures and a portion of the isolation material from the trench;
filling the first and second shafts with a second filler material;
removing the first filler material from the trench between the first and second shafts;
providing a data storage layer conformally on the sidewalls of the trench and filling the remainder of the trench with a conductive material.