US 11,751,390 B2
Manufacturing method of semiconductor device including stepping structure and supporting structure
Nam Jae Lee, Cheongju (KR)
Assigned to SK hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Jul. 12, 2021, as Appl. No. 17/373,409.
Application 17/373,409 is a continuation of application No. 16/552,905, filed on Aug. 27, 2019, granted, now 11,094,710.
Claims priority of application No. 10-2019-0016234 (KR), filed on Feb. 12, 2019.
Prior Publication US 2021/0343741 A1, Nov. 4, 2021
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/30 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/30 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/30 (2023.02); H10B 43/40 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first patterned stack structure including a cell region, a first portion in a first contact region, and a second portion in a second contact region, the second portion of the first patterned stack structure including a first opening;
forming a second patterned stack structure including a third portion over the cell region and the second contact region of the first patterned stack structure;
forming a second opening penetrating the third portion of the second patterned stack structure, the second opening being coupled to the first opening; and
forming a third opening penetrating the first portion of the first patterned stack structure when the second opening is formed,
wherein a diameter of a top of the third opening is greater than a diameter of a top of the second opening.