US 11,751,383 B2
Methods of forming microelectronic devices, and related microelectronic devices and electronic systems
Fatma Arzum Simsek-Ege, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 31, 2021, as Appl. No. 17/463,286.
Prior Publication US 2023/0060512 A1, Mar. 2, 2023
Int. Cl. H01L 27/10 (2006.01); H10B 12/00 (2023.01); H01L 23/00 (2006.01); G11C 5/06 (2006.01)
CPC H10B 12/488 (2023.02) [G11C 5/063 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H10B 12/482 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01)] 34 Claims
OG exemplary drawing
 
16. A method of forming a microelectronic device, comprising:
forming a first semiconductor wafer comprising memory cells within array regions, digit lines coupled to the memory cells and terminating within digit line exit regions neighboring the array regions, and word lines coupled to the memory cells and terminating within word line exit regions neighboring the array regions;
forming digit line contacts within the digit line exit regions, the digit line contacts coupled to the digit lines and horizontally surrounded by air gaps;
forming word line contacts within the word line exit regions, the word line contacts coupled to the word lines and horizontally surrounded by additional air gaps;
forming a second semiconductor wafer comprising control logic devices;
attaching the second semiconductor wafer to the first semiconductor wafer through oxide-oxide bonding;
coupling the digit line contacts to some of the control logic devices; and
coupling the word line contacts to some other of the control logic devices.