US 11,751,381 B2
Semiconductor device and fabrication method of the same
Seung Mi Lee, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Sep. 17, 2021, as Appl. No. 17/478,147.
Claims priority of application No. 10-2021-0029507 (KR), filed on Mar. 5, 2021.
Prior Publication US 2022/0285358 A1, Sep. 8, 2022
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/315 (2023.02) [H10B 12/0335 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bit line structure formed over a substrate;
a storage node contact plug spaced apart from the bit line structure; and
a nitride spacer positioned between the bit line structure and the storage node contact plug,
wherein the nitride spacer has a higher silicon content in a portion adjacent to the storage node contact plug than in a portion adjacent to the bit line structure.