US 11,751,379 B2
Semiconductor memory device
Jae Hoon Kim, Seoul (KR); Kwang-Ho Park, Cheonan-si (KR); Yong-Hoon Son, Yongin-si (KR); Hyunji Song, Anyang-si (KR); Gyeonghee Lee, Hwaseong-si (KR); and Seungjae Jung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 28, 2022, as Appl. No. 17/731,611.
Application 17/731,611 is a continuation of application No. 16/923,572, filed on Jul. 8, 2020, granted, now 11,348,924.
Claims priority of application No. 10-2019-0134616 (KR), filed on Oct. 28, 2019.
Prior Publication US 2022/0254783 A1, Aug. 11, 2022
Int. Cl. G11C 5/06 (2006.01); H10B 12/00 (2023.01); G11C 11/4097 (2006.01)
CPC H10B 12/30 (2023.02) [G11C 11/4097 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a semiconductor pattern on the substrate, and extending in a first direction that is parallel to a top surface of the substrate, the semiconductor pattern including a first region, a second region, and a third region between the first region and the second region;
a word line arranged adjacent to the third region of the semiconductor pattern, and extending in a second direction that is perpendicular to the top surface of the substrate;
a bit line contacting the first region of the semiconductor pattern, and extending in a third direction that is parallel to the top surface of the substrate and that is perpendicular to the first direction; and
a lower electrode contacting the second region of the semiconductor pattern, and extending in the first direction, the lower electrode including a first portion that is adjacent to the second region of the semiconductor pattern, and a second portion that is on the first portion;
a dielectric layer on the lower electrode; and
an upper electrode on the dielectric layer,
wherein a width of the first portion of the lower electrode in the third direction is less than a width of the second portion of the lower electrode in the third direction, and
a width of the first portion of the lower electrode in the second direction is substantially equal to a width of the second portion of the lower electrode in the second direction.