US 11,751,377 B2
Semiconductor device and method fabricating the same
Hyunyoung Kim, Singapore (SG); Dowon Kwak, Singapore (SG); and Kang-Won Seo, Singapore (SG)
Assigned to XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD., Qingdao (CN)
Filed by XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD., Qingdao (CN)
Filed on Dec. 16, 2021, as Appl. No. 17/552,896.
Application 17/552,896 is a division of application No. 16/687,534, filed on Nov. 18, 2019, granted, now 11,233,056.
Claims priority of provisional application 62/778,959, filed on Dec. 13, 2018.
Prior Publication US 2022/0108986 A1, Apr. 7, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 21/3105 (2006.01); H01L 21/285 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H10B 99/00 (2023.01)
CPC H10B 12/00 (2023.02) [H01L 21/28556 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/67075 (2013.01); H01L 21/76829 (2013.01); H10B 99/00 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
providing a substrate having an etch stop layer formed thereon;
forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer;
forming a hole penetrating the preliminary stacked structure and the etch stop layer;
forming a conductive pattern in the hole;
removing the upper sacrifice layer and a portion of the support layer;
removing the lower sacrifice layer;
forming a first conductive layer covering the conductive pattern; and
forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.