US 11,750,948 B2
Image sensors with different charge-to-voltage conversion factors and methods thereof
Gregory Roffet, Coublevie (FR); and Pascal Mellot, Lans en Vercors (FR)
Assigned to STMicroelectronics (Grenoble 2) SAS, Grenoble (FR)
Filed by STMicroelectronics (Grenoble 2) SAS, Grenoble (FR)
Filed on Nov. 29, 2021, as Appl. No. 17/456,846.
Claims priority of application No. 2012379 (FR), filed on Nov. 30, 2020.
Prior Publication US 2022/0174234 A1, Jun. 2, 2022
Int. Cl. H04N 25/71 (2023.01); H04N 25/46 (2023.01); H04N 25/583 (2023.01)
CPC H04N 25/745 (2023.01) [H04N 25/46 (2023.01); H04N 25/583 (2023.01)] 21 Claims
OG exemplary drawing
 
1. An image sensor comprising:
an array of photosensitive pixels dedicated to components of a spectrum of the light, each pixel including
a photosensitive semiconductor region,
a transfer gate coupled between the photosensitive region, and
a transfer node, the transfer node having a capacitive value defining a charge-to-voltage conversion factor of each pixel,
the array of photosensitive pixels being arranged according to a periodic pattern of macro-pixels each dedicated to one component, and each including a first pixel and a second pixel dedicated to this component, the capacitive value of the transfer node of the first pixel defining a first charge-to-voltage conversion factor, the capacitive value of the transfer node of the second pixel defining a second charge-to-voltage conversion factor different from the first charge-to-voltage conversion factor.