US 11,750,942 B2
Image sensor, an imaging device and a method of operating the same
Jaekyu Lee, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 18, 2022, as Appl. No. 17/577,566.
Claims priority of application No. 10-2021-0086455 (KR), filed on Jul. 1, 2021.
Prior Publication US 2023/0007192 A1, Jan. 5, 2023
Int. Cl. H04N 25/531 (2023.01); H04N 25/75 (2023.01); H04N 25/771 (2023.01); H01L 27/146 (2006.01); H04N 25/71 (2023.01)
CPC H04N 25/531 (2023.01) [H04N 25/75 (2023.01); H04N 25/771 (2023.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H04N 25/745 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a first capacitor;
a second capacitor;
a first transistor connected between a photodiode and a floating diffusion node, and having a gate for receiving a transfer signal;
a second transistor connected between a first power terminal and the floating diffusion node and having a gate for receiving a reset signal;
a third transistor connected between a second power terminal and a first node and having a gate connected to the floating diffusion node;
a fourth transistor connected between the first node and a column line and having a gate for receiving a precharge signal;
a fifth transistor connected between the first capacitor and a feedback node and having a gate for receiving a first sampling signal;
a sixth transistor connected between the second capacitor and the feedback node and having a gate for receiving a second sampling signal;
a seventh transistor connected between the first node and the feedback node and having a gate for receiving a first switch signal; and
an eighth transistor connected between the floating diffusion node and the feedback node and having a gate for receiving a second switch signal.