CPC H01M 4/366 (2013.01) [B22F 1/054 (2022.01); B22F 1/056 (2022.01); B22F 1/102 (2022.01); B22F 1/145 (2022.01); B22F 1/16 (2022.01); B22F 9/04 (2013.01); B22F 9/12 (2013.01); B22F 9/30 (2013.01); B32B 5/30 (2013.01); B22F 2202/13 (2013.01); B22F 2302/20 (2013.01); B22F 2302/45 (2013.01); B22F 2303/40 (2013.01); B22F 2304/054 (2013.01); B22F 2998/10 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H05H 1/30 (2013.01)] | 19 Claims |
6. Nanoparticles comprising a core and a passivation layer covering the core, wherein the core comprises silicon or an alloy thereof, and wherein the nanoparticles are manufactured by a method comprising:
providing a core precursor comprising the silicon or alloy thereof;
providing a plasma reactor comprising an induction plasma torch generating a plasma at a temperature configured for producing a vapor of the silicon or alloy thereof from the core precursor, wherein the plasma torch is in fluid communication with a quenching zone located downstream from the plasma torch, and wherein the quenching zone is cooled down by a quenching gas to a temperature configured for condensing of the vapor;
feeding the core precursor into the plasma torch, thereby producing the vapor of the silicon or alloy thereof; and
migrating the vapor to the quenching zone, thereby cooling the vapor and allowing condensation of the vapor into the core,
wherein the quenching gas comprises a passivating gas precursor, wherein the passivating gas precursor is configured for reacting with the surface of the core in the quenching zone to produce the passivation layer covering the core, thereby producing said nanoparticles, and wherein the passivating gas precursor is ammonia or nitrogen;
wherein the passivation layer is a layer of nitride of the silicon or alloy thereof,
wherein the nanoparticles are substantially spherical in shape and have an average particle size of at least 70 nm,
wherein the passivation layer is at most about 5 nm in thickness, and
wherein the nanoparticles are substantially free of SiOx and SiOH surface species.
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