CPC H01L 33/62 (2013.01) [H01L 27/156 (2013.01); H01L 33/44 (2013.01); H01L 2933/0066 (2013.01)] | 17 Claims |
1. A device comprising:
a substrate;
one or more epitaxial layers on the substrate;
a first transistor embedded in a first region of the substrate; and
a second transistor embedded in a second region of the substrate, the first region and the second region separated by a trench extending entirely through the substrate and through one or more portions of the one or more epitaxial layers.
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