US 11,749,781 B2
Light emitting device including multiple light emitting parts
Jong Min Jang, Ansan-si (KR); and Chang Yeon Kim, Ansan-si (KR)
Assigned to Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on Nov. 17, 2020, as Appl. No. 17/99,781.
Application 17/099,781 is a continuation of application No. 16/536,691, filed on Aug. 9, 2019, granted, now 10,862,006.
Claims priority of provisional application 62/764,959, filed on Aug. 17, 2018.
Prior Publication US 2021/0074889 A1, Mar. 11, 2021
Int. Cl. H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 25/075 (2006.01); H01L 33/14 (2010.01); H01L 33/08 (2010.01); H01L 33/06 (2010.01)
CPC H01L 33/382 (2013.01) [H01L 25/0756 (2013.01); H01L 27/156 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/387 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a first light emitting part including a first conductivity-type semiconductor layer, a first active layer, a second conductivity-type semiconductor layer, and a first ohmic electrode;
a second light emitting part disposed over the first light emitting part and including a first conductivity-type semiconductor layer, a second active layer, a second conductivity-type semiconductor layer, and a second ohmic electrode;
a third light emitting part disposed over the second light emitting part and including a first conductivity-type semiconductor layer, a third active layer, a second conductivity-type semiconductor layer, and a third ohmic electrode;
a common electrode pad electrically connected to the second conductivity-type semiconductor layer of each of the first, second, and third light emitting parts;
a first electrode pad electrically connected to the first conductivity-type semiconductor layer of the first light emitting part;
a second electrode pad electrically connected to the first conductivity-type semiconductor layer of the second light emitting part; and
a third electrode pad electrically connected to the first conductivity-type semiconductor layer of the third light emitting part,
wherein the light emitting device has substantially a quadrangular shape when viewed from the top, and has first, second, third, and fourth corners, and
wherein a length between first and second corners of the third light emitting part is less than a length between the third and fourth corners of the light emitting device.