US 11,749,780 B2
Ultraviolet light emitting diode
Ju Yong Park, Ansan-si (KR); Seong Gyu Jang, Ansan-si (KR); Kyu Ho Lee, Ansan-si (KR); and Joon Hee Lee, Ansan-si (KR)
Assigned to Seoul Viosys Co., Ltd., Ansan-sI (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on Nov. 16, 2020, as Appl. No. 17/99,499.
Application 17/099,499 is a division of application No. 16/246,565, filed on Jan. 14, 2019, granted, now 10,868,215.
Application 16/246,565 is a continuation of application No. PCT/KR2017/007286, filed on Jul. 7, 2017.
Claims priority of application No. 10-2016-0090201 (KR), filed on Jul. 15, 2016.
Prior Publication US 2021/0074887 A1, Mar. 11, 2021
Int. Cl. H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01)
CPC H01L 33/38 (2013.01) [H01L 33/00 (2013.01); H01L 33/24 (2013.01); H01L 33/62 (2013.01)] 5 Claims
OG exemplary drawing
 
1. An ultraviolet (UV) light emitting diode comprising:
a substrate;
an n-type semiconductor layer disposed on the substrate;
a mesa disposed on the n-type semiconductor layer and comprising an active layer and a p-type semiconductor layer;
an n-ohmic contact layer contacting the n-type semiconductor layer;
a p-ohmic contact layer contacting the p-type semiconductor layer;
an n-bump electrically connected to the n-ohmic contact layer; and
a p-bump electrically connected to the p-ohmic contact layer,
wherein the mesa comprises a plurality of branches,
the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches,
each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and
the p-bump covering at least two of the branches among the plurality of branches.