CPC H01L 31/02167 (2013.01) [H01L 31/0682 (2013.01); H01L 31/0745 (2013.01)] | 13 Claims |
1. A solar cell, comprising:
a doped region structure comprising a first doped layer, a passivation layer, and a second doped layer that are adapted to be disposed on a silicon substrate of the solar cell in sequence; wherein:
the passivation layer is a porous structure comprising a hole region, and the first doped layer and/or the second doped layer are disposed in the hole region;
the second doped layer is adapted to be connected to the silicon substrate through the hole region and the first doped layer; and
a doping concentration of the first doped layer is between a doping concentration of the silicon substrate and a doping concentration of the second doped layer;
a silicon substrate;
a first doped region and a second doped region, disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, disposed between the first doped region and the second doped region; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
each of the first doped region and the second doped region is the doped region structure; and
one of the first doped region and the second doped region is a P-type doped region, and the other of the first doped region and the second doped region is an N-type doped region; and a thickness of the passivation layer in the P-type doped region is greater than a thickness of the passivation layer in the N-type doped region.
|