US 11,749,761 B2
Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system
Gang Chen, Yiwu (CN); Wenli Xu, Yiwu (CN); Kaifu Qiu, Yiwu (CN); Yongqian Wang, Yiwu (CN); and Xinqiang Yang, Yiwu (CN)
Assigned to SOLARLAB AIKO EUROPE GMBH, Freiburg (DE)
Filed by Solarlab Aiko Europe GmbH, Freiburg (DE)
Filed on Oct. 24, 2021, as Appl. No. 17/509,049.
Claims priority of application No. 202110828468.X (CN), filed on Jul. 22, 2021.
Prior Publication US 2023/0027636 A1, Jan. 26, 2023
Int. Cl. H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/0745 (2012.01)
CPC H01L 31/02167 (2013.01) [H01L 31/0682 (2013.01); H01L 31/0745 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a doped region structure comprising a first doped layer, a passivation layer, and a second doped layer that are adapted to be disposed on a silicon substrate of the solar cell in sequence; wherein:
the passivation layer is a porous structure comprising a hole region, and the first doped layer and/or the second doped layer are disposed in the hole region;
the second doped layer is adapted to be connected to the silicon substrate through the hole region and the first doped layer; and
a doping concentration of the first doped layer is between a doping concentration of the silicon substrate and a doping concentration of the second doped layer;
a silicon substrate;
a first doped region and a second doped region, disposed on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, disposed between the first doped region and the second doped region; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein:
each of the first doped region and the second doped region is the doped region structure; and
one of the first doped region and the second doped region is a P-type doped region, and the other of the first doped region and the second doped region is an N-type doped region; and a thickness of the passivation layer in the P-type doped region is greater than a thickness of the passivation layer in the N-type doped region.