US 11,749,744 B2
Fin structure for vertical transport field effect transistor
Heng Wu, Guilderland, NY (US); Lan Yu, Voorheesville, NY (US); Dechao Guo, Niskayuna, NY (US); Junli Wang, Slingerlands, NY (US); Ruqiang Bao, Niskayuna, NY (US); and Ruilong Xie, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jun. 8, 2021, as Appl. No. 17/341,480.
Prior Publication US 2022/0393019 A1, Dec. 8, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/66666 (2013.01) [H01L 29/0692 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/7827 (2013.01); H01L 29/0653 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a bottom source/drain;
a top source/drain; and
a fin provided between the bottom source/drain and the top source/drain, the fin including a first fin structure and a second fin structure that vertically extend from a substrate, the vertical extending portions of the first and second fin structures spaced apart from each other, and that are symmetric to each other in a plan view,
wherein each of the first and second fin structures includes a main fin extending laterally in a first direction, and first and second extension fins extending laterally from the main fin in a second direction perpendicular to the first direction, and wherein the main fin extends laterally in the first direction beyond where the first and second extension fins connect to the main fin.