US 11,749,739 B2
Method of forming multiple-Vt FETS for CMOS circuit applications
Wei-E Wang, Austin, TX (US); and Mark S. Rodder, Dallas, TX (US)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 6, 2021, as Appl. No. 17/396,385.
Application 17/396,385 is a continuation of application No. 16/802,381, filed on Feb. 26, 2020, granted, now 11,088,258.
Application 16/802,381 is a continuation in part of application No. 15/898,421, filed on Feb. 16, 2018, granted, now 10,770,353, issued on Sep. 8, 2020.
Claims priority of provisional application 62/927,477, filed on Oct. 29, 2019.
Claims priority of provisional application 62/587,327, filed on Nov. 16, 2017.
Prior Publication US 2021/0376109 A1, Dec. 2, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 21/28 (2006.01); H01L 27/092 (2006.01)
CPC H01L 29/516 (2013.01) [H01L 21/28088 (2013.01); H01L 21/28158 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/0922 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/161 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A field-effect transistor (FET) device having a modulated Vt, the FET device comprising:
a source electrode;
a drain electrode;
a channel region between the source electrode and the drain electrode; and
a gate stack on the channel region, the gate stack comprising:
a layer combination comprising a plurality of oxygen dipoles to shift the modulated Vt in a first direction and by a first magnitude, and
a doped gate metal layer on the layer combination and to shift the modulated Vt in a second direction opposite the first direction and by a second magnitude smaller than the first magnitude.