CPC H01L 29/516 (2013.01) [H01L 21/28088 (2013.01); H01L 21/28158 (2013.01); H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/0922 (2013.01); H01L 29/045 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/161 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A field-effect transistor (FET) device having a modulated Vt, the FET device comprising:
a source electrode;
a drain electrode;
a channel region between the source electrode and the drain electrode; and
a gate stack on the channel region, the gate stack comprising:
a layer combination comprising a plurality of oxygen dipoles to shift the modulated Vt in a first direction and by a first magnitude, and
a doped gate metal layer on the layer combination and to shift the modulated Vt in a second direction opposite the first direction and by a second magnitude smaller than the first magnitude.
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