CPC H01L 29/41791 (2013.01) [H01L 27/0886 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/785 (2013.01)] | 22 Claims |
1. An integrated circuit structure, comprising:
a semiconductor fin having a protruding fin portion above an isolation structure, the protruding fin portion having a vertical portion and one or more lateral recess pairs in the vertical portion, and the vertical portion comprising a same semiconductor material continuous from a location above the one or more lateral recess pairs to a location below the one or more lateral recess pairs;
a gate stack over and conformal with the protruding fin portion of the semiconductor fin;
a first source or drain region at a first side of the gate stack; and
a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.
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