US 11,749,726 B2
Field effect transistor with source-connected field plate
Kyle Bothe, Cary, NC (US); Jeremy Fisher, Raleigh, NC (US); Matt King, Wake Forest, NC (US); Jia Guo, Apex, NC (US); Qianli Mu, San Jose, CA (US); and Scott Sheppard, Chapel Hill, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on May 20, 2021, as Appl. No. 17/325,666.
Application 17/325,666 is a continuation in part of application No. 17/081,476, filed on Oct. 27, 2020, granted, now 11,502,178.
Prior Publication US 2022/0130965 A1, Apr. 28, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/404 (2013.01) [H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01)] 33 Claims
OG exemplary drawing
 
33. A transistor device, comprising:
a semiconductor layer;
source and drain contacts on the semiconductor layer;
a gate contact on the semiconductor layer between the source and drain contacts;
a field plate over the semiconductor layer between the gate contact and the drain contact;
a source metallization in electrical contact with the source contact by a conductive via;
a first electrical connection between the field plate and the source metallization, wherein the first electrical connection is outside an active region of the transistor device; and
a second electrical connection between the field plate and the source metallization that is within the active region of the device.