US 11,749,704 B2
Method for forming photoelectric conversion element of image sensing device
Soon Yeol Park, Daejeon (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 18, 2020, as Appl. No. 16/905,634.
Claims priority of application No. 10-2019-0139391 (KR), filed on Nov. 4, 2019.
Prior Publication US 2021/0134874 A1, May 6, 2021
Int. Cl. H01L 27/146 (2006.01); H04N 25/77 (2023.01)
CPC H01L 27/14665 (2013.01) [H01L 27/1463 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H04N 25/77 (2023.01)] 17 Claims
OG exemplary drawing
 
1. A method for forming an image sensing device, comprising:
forming a first photoelectric conversion element in a first substrate by implanting first-type impurities into the first substrate;
providing a second substrate over the first substrate; and
forming a second photoelectric conversion element in the second substrate by implanting the first-type impurities into the second substrate, the second photoelectric conversion element being in contact with the first photoelectric conversion element,
wherein the first photoelectric conversion element and the second photoelectric conversion element form a single photoelectric conversion element by contacting each other.