US 11,749,695 B2
Image sensor and method of fabricating the same
Changkeun Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 11, 2022, as Appl. No. 17/692,487.
Application 17/692,487 is a continuation of application No. 16/814,645, filed on Mar. 10, 2020, granted, now 11,302,724.
Application 16/814,645 is a continuation of application No. 15/994,100, filed on May 31, 2018, granted, now 10,615,200, issued on Apr. 7, 2020.
Claims priority of application No. 10-2017-0150692 (KR), filed on Nov. 13, 2017.
Prior Publication US 2022/0199662 A1, Jun. 23, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01)
CPC H01L 27/14605 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14607 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14689 (2013.01); H01L 27/14643 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate comprising a pad zone and having a first surface and a second surface opposing each other;
a first pad separation pattern on the pad zone and extending from the first surface of the semiconductor substrate toward the second surface of the semiconductor substrate;
a second pad separation pattern on the pad zone and extending from the second surface of the semiconductor substrate toward the first surface of the semiconductor substrate, wherein the second pad separation pattern is in contact with the first pad separation pattern; and
a through via on the pad zone and spaced apart from the first and second pad separation patterns, the through via penetrating the semiconductor substrate.