US 11,749,693 B2
Manufacturing method of array substrate, array substrate and display device
Yuming Xia, Beihai (CN); En-tsung Cho, Beihai (CN); and Lidan Ye, Beihai (CN)
Assigned to BEIHAI HKC OPTOELECTRONICS TECHNOLOGY CO., LTD., Beihai (CN); and HKC CORPORATION LIMITED, Shenzhen (CN)
Filed by BEIHAI HKC OPTOELECTRONICS TECHNOLOGY CO., LTD., Beihai (CN); and HKC CORPORATION LIMITED, Shenzhen (CN)
Filed on Mar. 8, 2021, as Appl. No. 17/194,484.
Claims priority of application No. 202010740589.4 (CN), filed on Jul. 28, 2020.
Prior Publication US 2022/0037377 A1, Feb. 3, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 27/12 (2006.01)
CPC H01L 27/1259 (2013.01) [H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A manufacturing method of an array substrate, comprising:
providing a substrate;
depositing and patterning a gate layer on the substrate;
depositing a protective layer on the substrate covered with the gate layer by atomic layer deposition; and
depositing and patterning an amorphous silicon layer and an ohmic contact layer on the protective layer;
wherein depositing a protective layer on the substrate covered with the gate layer by atomic layer deposition comprises:
placing the substrate covered with the gate layer into a reaction chamber for atomic layer deposition, heating the reaction chamber to adjust a temperature to a preset temperature, and evacuating the reaction chamber to adjust a pressure to a preset pressure;
controlling a silicon precursor source to be sent into and to stay in the reaction chamber for 0.03 s-0.08 s;
controlling an inert gas to purge the reaction chamber for 5 s-10 s;
controlling a nitrogen precursor source to be sent into and to stay in the reaction chamber for a 18 s-30 s;
controlling the inert gas to purge the reaction chamber for 15 s-28 s; and
cyclically repeating the operations of controlling a silicon precursor source to be sent into and to stay in the reaction chamber for 0.03 s-0.08 s, controlling an inert gas to purge the reaction chamber for 5 s-10 s, controlling a nitrogen precursor source to be sent into and to stay in the reaction chamber for 18 s-30 s, and controlling the inert gas to purge the reaction chamber for 15 s-28 s, to form the protective layer on the substrate covered with the gate layer.