US 11,749,673 B2
ESD protection device
Shu-Yu Su, Hsinchu (TW); Jam-Wem Lee, Hsinchu (TW); and Wun-Jie Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on May 9, 2022, as Appl. No. 17/739,357.
Application 17/739,357 is a continuation of application No. 16/993,399, filed on Aug. 14, 2020, granted, now 11,355,491.
Application 16/993,399 is a continuation of application No. 15/367,304, filed on Dec. 2, 2016, granted, now 10,777,547.
Claims priority of provisional application 62/341,247, filed on May 25, 2016.
Prior Publication US 2022/0262788 A1, Aug. 18, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/02 (2006.01); H02H 9/04 (2006.01)
CPC H01L 27/0285 (2013.01) [H01L 27/0266 (2013.01); H02H 9/046 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electrostatic discharge (ESD) protection device comprising:
a trigger circuit;
a driver circuit comprising two parallel branches that are both configured to receive a same ESD protection signal from the trigger circuit; and
a discharge circuit comprising a first transistor and a second transistor connected in series to a first voltage potential;
wherein when an ESD spike is applied to the first voltage potential, the same ESD protection signal turns on both the first and second transistors; and
wherein the first and second transistors are fin field effect transistors.