CPC H01L 25/50 (2013.01) [H01L 21/56 (2013.01); H01L 21/78 (2013.01); H01L 23/552 (2013.01); H01L 25/0652 (2013.01); H01L 2225/06524 (2013.01)] | 21 Claims |
1. A method of making a semiconductor device, comprising:
providing a first semiconductor package layer;
disposing a photosensitive polyimide (PSPI) layer over the first semiconductor package layer;
forming a pattern in the PSPI layer;
forming a conductive layer over the PSPI layer;
removing the PSPI layer to leave the conductive layer in the pattern on the first semiconductor package layer;
singulating the first semiconductor package layer;
disposing a tape over the first semiconductor package layer after singulation; and
forming a shielding layer over the first semiconductor package layer and tape.
|