US 11,749,637 B2
Hybrid bonding interconnection using laser and thermal compression
Min Ho Kim, Seoul (KR); Seok Ho Na, Incheon (KR); Dong Hyeon Park, Seoul (KR); Choong Hoe Kim, Seoul (KR); Woo Kyung Ju, Gyeonggi-do (KR); Yun Seok Song, Gwangju (KR); and Dong Su Ryu, Incheon (KR)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed on Jun. 23, 2020, as Appl. No. 16/908,928.
Prior Publication US 2021/0398940 A1, Dec. 23, 2021
Int. Cl. B23K 26/50 (2014.01); H01L 23/00 (2006.01); B23K 101/40 (2006.01)
CPC H01L 24/81 (2013.01) [B23K 26/50 (2015.10); H01L 24/75 (2013.01); B23K 2101/40 (2018.08); H01L 2224/75263 (2013.01); H01L 2224/81048 (2013.01); H01L 2224/81201 (2013.01); H05K 2201/068 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method to manufacture a semiconductor device, comprising:
providing an electronic component over a substrate, the electronic component comprising a body comprising silicon and an interconnect comprising a metal, wherein the interconnect of the electronic component contacts a conductive structure of the substrate;
providing the substrate over a laser assisted bonding (LAB) tool, wherein the LAB tool comprises a stage block comprising a window, wherein the window of the stage block comprises a solid translucent material; and
heating the interconnect with a laser beam through the window until the interconnect is bonded with the conductive structure;
wherein more heat is applied to the interconnect than to the body of the electronic component;
wherein the stage block supports the window and the substrate over the laser beam, and wherein the laser beam is directed at the interconnect through a bottom side of the window and through the substrate without passing through the electronic component;
wherein the substrate is on the window, and the window is configured to support the substrate; and
wherein a footprint of the window is as large or larger than a footprint of the substrate.