CPC H01L 24/45 (2013.01) [H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 25/0652 (2013.01); H01L 2224/45032 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45164 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/85205 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06582 (2013.01)] | 13 Claims |
1. A semiconductor device comprising:
a first electrode;
a second electrode;
a wire extending between the first electrode and the second electrode; and
an insulator configured to seal the first electrode, the second electrode, and the wire,
wherein the wire includes:
a first conductor in contact with the first electrode and the second electrode;
a second conductor that is provided inside the first conductor, has no contact with the first electrode and the second electrode, and is different from the first conductor;
a first portion in contact with the first electrode;
a second portion in contact with the second electrode;
a third portion between a first side of the first portion and the second portion; and
a fourth portion in a second side of the first portion different from the first side, wherein
the first portion of the wire and the second portion of the wire have diameters ranging from ⅕ to ½ of a diameter of the third portion of the wire,
the first conductor and the second conductor are in contact with the insulator in the fourth portion, and
a thickness of the first conductor is constant over the fourth portion, the first portion, the third portion, and the second portion.
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